power transistor for isolated package applications designed for generalpurpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. ? electrically similar to the popular 2n6107 ? 70 v ceo(sus) ? 7 a rated collector current ? no isolating washers required ? reduced system cost ? high current gainbandwidth product f t = 4 mhz (min) ca, i c = 500 madc ? ul recognized, file #e69369, to 3500 v rms isolation ????????????????????????????????? ????????????????????????????????? maximum ratings ??????????????????????? ? ????????????????????? ? ??????????????????????? rating ???? ??? ? ???? symbol ?????? ? ???? ? ?????? value ??? ? ? ? ??? unit ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter voltage ???? ??? ? ???? v ceo ?????? ? ???? ? ?????? 70 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? collectorbase voltage ???? ??? ? ???? v cb ?????? ? ???? ? ?????? 80 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ??????????????????????? emitterbase voltage ???? ??? ? ???? v eb ?????? ? ???? ? ?????? 5 ??? ? ? ? ??? vdc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? rms isolation voltage (1) test no. 1 per fig. 13 (for 1 sec, r.h. < 30%, test no. 2 per fig. 14 t a = 25 c) test no. 3 per fig. 15 ???? ??? ? ??? ? ???? v isol ?????? ? ???? ? ? ???? ? ?????? 4500 3500 1500 ??? ? ? ? ? ? ? ??? v rms ??????????????????????? ? ????????????????????? ? ??????????????????????? collector current e continuous peak ???? ??? ? ???? i c ?????? ? ???? ? ?????? 7 10 ??? ? ? ? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? base current ???? ??? ? ???? i b ?????? ? ???? ? ?????? 3 ??? ? ? ? ??? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? total power dissipation* @ t c = 25 c derate above 25 c ???? ??? ? ???? p d ?????? ? ???? ? ?????? 34 0.27 ??? ? ? ? ??? watts w/ c ??????????????????????? ? ????????????????????? ? ??????????????????????? total power dissipation @ t a = 25 c derate above 25 c ???? ??? ? ???? p d ?????? ? ???? ? ?????? 2 0.016 ??? ? ? ? ??? watts w/ c ??????????????????????? ??????????????????????? operating and storage junction temperature range ???? ???? t j , t stg ?????? ?????? 65 to +150 ??? ??? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ??????????????????????? ??????????????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ??????????????????????? ??????????????????????? thermal resistance, junction to ambient ???? ???? r q ja ?????? ?????? 62.5 ??? ??? c/w ??????????????????????? ??????????????????????? thermal resistance, junction to case* ???? ???? r q jc ?????? ?????? 3.7 ??? ??? c/w ??????????????????????? ??????????????????????? lead temperature for soldering purpose ???? ???? t l ?????? ?????? 260 ??? ??? c *measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the devic e mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) proper strike and creepage distance must be provided. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev. 3 1 publication order number: mjf6107/d mjf6107 pnp silicon power transistor 7 amperes 70 volts 34 watts case 221d02 to220 type
mjf6107 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 100 madc, i b = 0) ????? ????? v ceo(sus) ??? ??? 70 ???? ???? e ??? ??? vdc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 80 vdc, i b = 0) ????? ????? i ces ??? ??? e ???? ???? 1 ??? ??? m adc ?????????????????????? ?????????????????????? collector cutoff current (v ce = 80 vdc, v eb(off) = 1.5 vdc) ????? ????? i cex ??? ??? e ???? ???? 1 ??? ??? m adc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 1 ??? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 2 adc, v ce = 4 vdc) dc current gain (i c = 7 adc, v ce = 4 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 30 5 ???? ? ?? ? ???? 90 e ??? ? ? ? ??? e ?????????????????????? ?????????????????????? collectoremitter saturation voltage (i c = 7 adc, i b = 3 adc) ????? ????? v ce(sat) ??? ??? e ???? ???? 2 ??? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 7 adc, v ce = 4 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 2 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gainbandwidth product (2) (i c = 500 madc, v ce = 4 vdc, f test = 1 mhz) ????? ????? f t ??? ??? 4 ???? ???? e ??? ??? mhz ?????????????????????? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1 mhz) ????? ????? c ob ??? ??? e ???? ???? 250 ??? ??? pf ?????????????????????? ?????????????????????? smallsignal current gain (i c = 0.5 adc, v ce = 4 vdc, f = 50 khz) ????? ????? h fe ??? ??? 20 ???? ???? e ??? ??? e notes: 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. f t = |h fe| ? f test .
mjf6107 http://onsemi.com 3 figure 1. switching time test circuit +11 v 25 m s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma t, time (s) m t, time (ms) 1 0.01 0.3 0.2 0.1 0.05 0.02 r(t), transient thermal resistance (normalized) 0.5 10 30 50 100 300 500 1k 3k 5k single pulse r q jc(t) = r(t) r q jc t j(pk) - t c = p (pk) r q jc (t) 15 3 10k 0.5 0.3 0.03 0.1 0.2 20 200 2k 2 0.1 i c , collector current (amp) 0.3 3 2 t j = 25 c v cc = 30 v i c /i b = 10 t d @ v be(off) 5 v t r 0.07 0.2 0.5 1 2 5 7 figure 2. turnon time figure 3. thermal response 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
mjf6107 http://onsemi.com 4 i c , collector current (amps) 50 m s 0.1 ms dc 10 2 v ce , collector-emitter voltage (volts) 3 100 3 2 5 0.5 7203050 0.3 0.15 70 1510 figure 4. activeregion safe operating area current limit secondary breakdown lim it thermal limit @ t c = 25 c (single pulse) 15 7 1 0.7 0.2 0.5 ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. c, capacitance (pf) t, time (s) m 300 v r , reverse voltage (volts) c ib 0.5 100 50 t j = 25 c 200 70 3 1 figure 5. turnoff time figure 6. capacitance figure 7. dc current gain figure 8. collector saturation region 2.5 a 0.07 i c , collector current (amp) v ce , collector-emitter voltage (volts) 0.07 i c , collector current (amp) 0.1 7 500 t j = 150 c 110 i b , base current (ma) 0.4 1000 1.2 2 h fe , dc current gain 100 5 a 0.8 1.6 5 50 30 5 230 10 20 v ce = 2 v 300 200 100 70 50 30 20 10 7 0.2 0.3 0.5 0.7 2 3 5 20 200 30 300 50 500 0 i c = 1 a t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 5 0.05 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.1 7 1 0.2 0.3 0.5 0.7 2 3 5 t s t f c ob t j = 25 c 25 c -55 c
mjf6107 http://onsemi.com 5 v , temperature coefficients (mv/ c) q v, voltage (volts) figure 9. aono voltages 0 figure 10. temperature coefficients 2 figure 11. collector cutoff region figure 12. effects of baseemitter resistance t j = 25 c 10 m 1.6 1.2 t j = 150 c i c , collector current (amp) -2.5 v be , base-emitter voltage (volts) 10 3 t j , junction temperature ( c) 0.8 0.4 v be(sat) @ i c /i b = 10 v be @ v ce = 4 v 0.07 0.1 7 1 0.2 0.3 0.5 2 3 5 +2.5 0 +0.5 +1 +1.5 +2 -0.5 -1 -1.5 -2 *applies for i c /i b < h fe /4 * q vc for v ce(sat) q vb for v be +25 c to +150 c -55 c to +25 c 0.07 0.1 7 1 0.2 0.3 0.5 2 3 5 1 m 100 k 10 k 1 k 0.1 k 10 -3 10 -2 10 -1 10 0 10 1 10 2 20 60 120 140 100 40 80 160 - 0.3 - 0.2 - 0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 +0.7 v ce = 30 v i c = i ces 100 c 25 c reverse forward (typical i ces values obtained from figure 11) i c = i ces i c = 10 x i ces v ce = 30 v i c = 2 x i ces , collector current (a) m i c r be , external base-emitter resistance (ohms) v ce(sat) = i c /i b = 10 i c , collector current (amp) +25 c to +150 c -55 c to +25 c
mjf6107 http://onsemi.com 6 mounted fully isolated package leads heatsink 0.110" min figure 13. clip mounting position for isolation test number 1 *measurement made between leads and heatsink with all leads shorted together clip clip 0.107" min leads heatsink 0.107" min figure 14. clip mounting position for isolation test number 2 figure 15. screw mounting position for isolation test number 3 mounted fully isolated package mounted fully isolated package leads heatsink test conditions for isolation tests* 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a con- stant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 440 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 440 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 16. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040.
mjf6107 http://onsemi.com 7 package dimensions case 221d02 to220 type issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.621 0.629 15.78 15.97 inches b 0.394 0.402 10.01 10.21 c 0.181 0.189 4.60 4.80 d 0.026 0.034 0.67 0.86 f 0.121 0.129 3.08 3.27 g 0.100 bsc 2.54 bsc h 0.123 0.129 3.13 3.27 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 n 0.200 bsc 5.08 bsc q 0.126 0.134 3.21 3.40 r 0.107 0.111 2.72 2.81 s 0.096 0.104 2.44 2.64 u 0.259 0.267 6.58 6.78 b y g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane t u c s j r
mjf6107 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mjf6107/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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